Abstract
Initial stages of growth of CaF 2 on vicinal Si(111) substrates, titled 3° off-axis toward the [112̄] direction, by molecular beam epitaxy (MBE) have been characterised by atomic force microscopy (AFM) and transmission electron microscopy (TEM). We observe the effect of the Si(111) step bunching on the CaF 2 surface morphology, resulting in the anisotropic character of the CaF 2 growth mode. By correlating AFM and TEM observations, the effect of threading dislocations on the CaF 2 surface morphology is described. We also investigate the residual strain in the CaF 2 layer as a function of thickness and compare the results obtained to those reported for CaF 2 layers grown on nominal Si(111) substrates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
