Abstract
In this paper, we report graphene on Ge(111) by using an electron beam evaporation under appropriate conditions in ultra high vacuum. Surface morphology, structural and electronic properties of graphene on Ge(111) substrate are investigated in detail by low energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, optical microscopy, scanning electron microscopy, atomic force microscopy and scanning tunneling microscopy. We found that the crystalline quality of graphene reduces with increasing the amount of deposited carbon atoms during graphene formation at near melting temperature of the Ge substrate.
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