Abstract
The side wall profile roughness of the silicon waveguide prepared by electron beam lithography and reactive ion etching is extracted by using the boundary tracing method. The maximum, minimum, and average roughness values are extracted from the side wall boundary, and the changes of the side wall boundary of waveguide after electron beam exposure and reactive ion etching were compared. The roughness variation of the waveguide side wall is similar with the same length. And roughness from the bottom of the waveguide etched region is measured directly by laser confocal microscope and roughness correlation statistics are also obtained.
Highlights
Large-capacity and high-rate optical communication networks have greatly promoted the research and development of photonic integrated devices [1,2]
SOI Nano-waveguides with their great advantages in lower optical transmission loss, compatibility with CMOS, and high integration make them a typical structure in photonic integrated devices, and many remarkable achievements have been made in the field of optical waveguides [3,4,5], but with its expanding applications, comes many challenges
Research shows that when the surface roughness of the optical waveguide is 1–2 nm, the transmission loss is lower than 1 dB/cm
Summary
Large-capacity and high-rate optical communication networks have greatly promoted the research and development of photonic integrated devices [1,2]. Research shows that when the surface roughness of the optical waveguide is 1–2 nm, the transmission loss is lower than 1 dB/cm. JBX5500ZA (JEOL, sample surface is exposed using an electron beam lithography (EBL). Electron beam lithography lithography and and reactive reactive ion ion etching etching process process parameters In this this paper, paper, devices devices used used for for measurement measurement are areSEM. SEM is used to measure the structure size of waveguide in process optimization, parameters are are as as follows; follows; low low vacuum vacuum mode mode resolution: resolution: 4.0. CLSM to scan and and measure the bottom roughness of the etched areaetched in optical waveguides, 22 groups of waveguides silicon optical are randomly selectedoffor four groups of groups of silicon optical are waveguides randomly selected for four groups samples, technical samples, technical parameters are as follows: Standard optical magnification is. Adjustable lower limitadjustable of four byfrom one to a maximum of 2048 by 2048
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