Abstract
Scanning tunneling microscopy is used to study the morphology of nominally flat p-type (2 × 4)-reconstructed GaAs(001) and faceted n-type GaAs(001) surfaces. On the flat surfaces the effect of the MBE growth rate on the island structures was investigated. A detailed statistical analysis of the STM images of individual growths was performed to calculate the step-density and the step-length ratio of the islands. The density of the steps parallel to the dimers, A-type steps, is about twice the density of the steps perpendicular to the dimers, B-type steps. The length ratio of step A to step B was calculated to be 2.4 : 1. The images obtained on the faceted surface reveal predominantly a (2 × 4) local ordering. There is also an increased anisotropy in the local island shape in comparison to the flat surfaces.
Published Version
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