Abstract
Scanning tunnelling microscopy has been used to study the differences between A-type and B-type atomic steps on vicinal GaAs(001) surfaces miscut 1° towards either (111)A or (111)B. Two situations involving mass transport at the surface have been considered: sub-monolayer homoepitaxial growth and the phase transition from the (2×4) to c(4×4) surface reconstruction. In both cases, B-type steps are found to be more favourable as sites for the growth of new material and hence have a stronger influence on the overall surface morphology than A-type steps.
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