Abstract
The effect of different chemical mechanisms for adsorption, which depend on the incidence energy of disilane, on the film morphology is investigated by comparing deposition by high (∼2 eV) kinetic energy disilane jets, direct chemisorption; low (∼0.09 eV) kinetic energy disilane jets and ultra high vacuum chemical vapor deposition, trapping-mediated chemisorption. For substrate temperatures of 500–550 °C the mechanism for adsorption does not influence the film morphology as observed for films up to 3300 Å thick, which are comparable in smoothness to the starting substrate, as determined by atomic force microscopy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
