Abstract
Si/Si0.66Ge0.34coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·pmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.
Highlights
Silicon is notably the most widely used semiconductor in the microelectronics industry
We present a photoluminescence (PL) study on strained Si/Si0.66Ge0.34 coupled quantum well (CQW) grown by ultra high vacuum chemical vapor deposition (UHV-CVD)
The dark regions correspond to the SiGe quantum wells (QWs), while the relatively bright regions correspond to the Si barriers
Summary
Silicon is notably the most widely used semiconductor in the microelectronics industry. Interwell coupling effect plays an essential role to determine the energy transitions and resultant optical and electronic properties of the Si/SiGe QC structure. The higher Ge fraction in our samples is expected to produce an effectively larger valence band offset, which is more appropriate for design of the QC structure for light emission.
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