Abstract
Operation of power silicon diodes above the maximum permissible specified junction temperature can lead to device catastrophic failure that is usually caused by an electrical short-circuit located at the junction peripheral surface. It is shown that a noticeable surface leakage reverse current component found in the available commercial devices may cause I-V reverse characteristic instability through thermal runaway and finally device failure. Suitable junction passivation can reduce further the surface component so that reliable operation above 200 C junction temperature to be possible at least for standard recovery PN junction devices.
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