Surface H‐field mapping of a GaAs single pole double throw switch chip based on quantum diamond probe

Abstract

With the improvement of design capability and manufacture technology, the integration as well as the complexity of chips have also increased dramatically, and it becomes critical to realize noninvasive electromagnetic inspection of chips at higher resolutions. In this paper, we propose a submicron-resolution microwave near-field imaging system based on the nitrogen-vacancy center (NV) in diamond, which mainly consists of an optical hardware system and a software control system, and can be used for nondestructive imaging of microwave fields on the surface of integrated circuits with submicron resolution. We applied this technique to scan the surface microwave field distribution of a GaAs single pole double throw switch chip. The scanning imaging system can image the near-field magnetic distribution for the chip, which provides a new solution for analyzing the current distribution on the chip surface and thus addressing problems such as excessive current or crosstalk. It is worth mentioning that the diamond NV color center-based sensor has a very high-spatial resolution and magnetic field detection sensitivity at room temperature, while the dielectric constant of natural diamond is 5.5, which also provides the possibility of diamond as a sensor in complex radiation environments and is an ideal detector material for near-field imaging of electromagnetic fields.