Abstract
High-k polymeric layers were prepared by combining various functional groups and were applied as gate dielectrics for practical organic field-effect transistors (OFETs). Crosslinking of the polymeric layers through UV-assisted organic azide fluorine-based crosslinkers induced dramatic improvements in the electrical performance of the OFET, such as field-effect mobility and bias-stress stability. Our synthesis and manufacturing method can be a useful technique for ensuring device operation stability and electrical property enhancement. With this analysis, we further applied our polymer-dielectric OFETs to flexible-platform-based electronic components, including unit OFETs and simple logic devices (NOT, NAND, and NOR gates). The outcomes of this research and development suggest a suitable method for the low-cost mass production of large-area flexible and printable devices, using a printing-based approach to replace current processes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
