Abstract
We demonstrate a surface emitting 1.5 µm multi-quantum well (MQW) light-emitting diode (LED) on a 3-inch epitaxial lateral overgrowth (ELOG) InP/Si wafer. The enhanced crystalline quality of ELOG InP/Si is revealed by various characterization techniques, which gives rise to a MQW with high photoluminescence intensity at 1.5 µm and interference fringes arising from the vertical Fabry-Perot cavity. The LED devices exhibited strong electroluminescence intensity that increased with pump current. Moreover, transparency current measurements indicate optical gain in the 1.5 µm MQW on InP/Si. The results are encouraging for obtaining wafer scale 1.5 µm surface emitting laser structures on silicon with further optimization.
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