InGaAsP multi-quantum wells at 1.5 μm wavelength grown on indium phosphide templates on silicon

Abstract

Sulfur doped InP templates were deposited in ring patterns on Si substrate by epitaxial lateral overgrowth (ELOG) in low pressure hydride vapor phase epitaxy (LP-HVPE) system. The morphology of ELOG InP was examined by atomic force microscopy (AFM) and the surface is fairly smooth. The thermal strain in these ELOG InP templates was characterized by room temperature photoluminescence (PL) and no red shift of peak wavelength induced by thermal tensile strain in InP templates was detected. Strain compensated InGaAsP 6 periods' multi-quantum wells (MQW) at 1.5 /spl mu/m wavelength were grown on these templates by metalorganic vapor phase epitaxy (MOVPE). Morphology of these MQW was characterized by AFM and a rough surface is noticed. The optical property of the MQW on ELOG InP/Si template was characterized by room temperature PL and a large red-shift of 24 nm was detected. This could be due to the thicker and indium richer InGaAsP layers grown on non-planar substrates, where interfacet migration of reactant atoms adsorbed on boundary planes of ELOG InP play an important role.