Surface electronic bands of GaAs(1 1 0)-Sb: An angular resolved photoemission study

Abstract

Sb deposited in monolayer coverage at 300 K on cleaved GaAs(1 1 0) surfaces forms a well ordered overlayer with a p(1 × 1) LEED pattern. The two dimensional (2 D) surface electronic band structure of this overlayer system is studied by angular resolved UV photoemission spectroscopy (ARUPS) along the Γ X and Γ X symmetry lines of the pp(1 × 1) surface Brillouin zone. Four surface state bands in the energy range down to 5 eV below the upper valence band edge are resolved. A comparison with available theoretical band structure calculations yields satisfactory agreement.