Abstract
The two-dimensional surface electronic band structure of H: GaAs(110) is studied by angular resolved ultraviolet photoemission spectroscopy along the X ′,- M and X - M symmetry lines and in the high symmetry points of the surface Brillouin zone. Three surface state bands are resolved in the first 5 eV below the upper valence band edge. A comparison with theoretical band structure calculations yields a satisfactory agreement, giving evidence of hydrogen induced GaAs(110) surface derelaxation. The clean GaAs(110) surface electronic band structure is studied comparing results with available theoretical and experimental data.
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