Abstract
If Sb is deposited in monolayer coverage at room temperature on cleaved GaAs(110) and GaP(110) surfaces, well-ordered overlayers with a p(1 × 1) LEED pattern are formed. The surface electronic band structure of these overlayer systems is studied by angular-resolved UV photoemission spectroscopy (ARUPS). Along the Γ X , Γ X′ and Γ M (GaP) symmetry lines of the p(1 × 1) surface Brillouin zone surface bands are resolved in the upper part of the bulk valence band. On GaAs furthermore parts of surface state bands are detected near X and X′ at energies between 3 and 4 eV below the Fermi level. A comparison with available theoretical band structure calculations yields satisfactory agreement.
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