Abstract
ABSTRACTThe correlation between the surface morphology and the lattice relaxation in strained SiGe/Si heteroepitaxy has been studied. It is found that the surface crosshateched pattern develops as the strained epilayer thickness increases. The effect of thermal annealing and boron dopant level has also been studied. The result suggests that the crosshatched morphology on the surface is constituted by surface slip steps of glissile dislocation motion in the strained epitaxial growth processing.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
