Abstract
GeSn alloy with 7.68% Sn concentration grown by molecular beam epitaxy has been rapidly annealed at different temperatures from 300°C to 800°C. Surface morphology and roughness annealed below or equal to 500°C for 1 min have no obvious changes, while the strain relaxation rate increasing. When the annealing temperature is above or equal to 600°C, significant changes occur in surface morphology and roughness, and Sn precipitation is observed at 700°C. The structural properties are analyzed by reciprocal space mapping in the symmetric (004) and asymmetric (224) planes by high resolution X-ray diffraction. The lateral correlation length and the mosaic spread are extracted for the epi-layer peaks in the asymmetric (224) diffraction. The most suitable annealing temperature to improve both the GeSn lattice quality and relaxation rate is about 500°C.
Highlights
Group IV materials with engineered band structures have gain increased attentions in recent years.1,2 GeSn alloy is one of the most promising semiconductor materials with a tunable bandgap
GeSn alloy is predicted to hold high electron and hole mobility, which makes it a potential candidate material for both optoelectronic and electronic devices integrated on the Si platform
Structural property and Sn concentration were analyzed by 2DRSM using high resolution X-ray diffraction (XRD) and scanning electron microscope (SEM)
Summary
Group IV materials with engineered band structures have gain increased attentions in recent years. GeSn alloy is one of the most promising semiconductor materials with a tunable bandgap. Group IV materials with engineered band structures have gain increased attentions in recent years.. GeSn alloy is one of the most promising semiconductor materials with a tunable bandgap. Ge is an indirect bandgap semiconductor which has a 136 meV gap between the L-valley and the Γ-valley, introducing Sn in Ge forming a GeSn alloy could make transformation of the L-valley and the Γ-valley to convert it into a direct bandgap semiconductor. GeSn with a direct bandgap can emit light efficiently and is compatible with COMS technology.. Noteworthy milestones like GeSn laser have spurred a fast development in this research field. GeSn alloy is predicted to hold high electron and hole mobility, which makes it a potential candidate material for both optoelectronic and electronic devices integrated on the Si platform.
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