Abstract
GeSn thin films on Ge (001) with various Sn concentrations from 3.36 to 7.62% were grown by molecular beam epitaxy and characterized. The structural properties were analyzed by reciprocal space mapping in the symmetric (004) and asymmetric (224) planes by high resolution X-ray diffraction (XRD). The lateral correlation length (LCL) and the mosaic spread (MS) were extracted for the epi-layer peaks in the asymmetric (224) diffraction. With the increase of Sn concentration, the LCL reduces while the MS increases, indicating degrading crystalline quality. Dislocations were observed in the sample with 7.62% Sn concentration by transmission electron microscope, consistent with the strain relaxation found in XRD mapping. Besides, the surface morphologies were investigated.
Highlights
The silicon (Si) based electronics industry has been developing fast since 1950s.1 The improved performance of integrated circuits was mostly due to the increasing integration of transistors
The structural properties and Sn concentration were analyzed by 2DRSM in the symmetric (004) and the asymmetric (224) diffractions by high resolution X-ray diffraction (XRD)
It can be observed that separation between the substrate peak and the epi-layer peak becomes large with increasing Sn concentration, due to the increased lattice constant
Summary
The silicon (Si) based electronics industry has been developing fast since 1950s.1 The improved performance of integrated circuits was mostly due to the increasing integration of transistors. The silicon (Si) based electronics industry has been developing fast since 1950s.1. The improved performance of integrated circuits was mostly due to the increasing integration of transistors. The scaling of microelectronic circuits is driven to be increasingly sophisticated, which in turn leads to a range of challenges, including high costs, high power consumption, quantum limitations, etc.[2] Si photonics is one of the most promising solutions to solve these problems, and significant progresses have been demonstrated for many Si-based optical components and integration techniques.[3] The integration of optoelectronics and microelectronics on a single chip can exhibit the advantages of both low power consumption and high speed. Commercial Si photonics products have already been available, for example “a single-mode wavelength-division-multiplexing transceiver” from Kotura.[4]
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