Abstract
The optimal conditions for preparing the surface and electrochemically depositing the metal have been determined for surface-barrier junctions of palladium on n-type gallium aluminum antimonide. The temperature and composition dependences of the voltage-current and voltage-capacitance characteristics of the junctions have been measured. When combined with the frequency dependence of the capacitance, these data show that, depending on the condition during formation, nearly ideal Schottky barriers are formed (i.e., a metal-intermediate layer-semiconductor system). The mechanism for current flow depends on the structure of the contact and the solid-solution composition. Anomalous barrier behavior at low temperatures is due to specific properties of the solid solution.
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