Abstract
The height of the potential barrier for the Ag-GaAsP has been measured experimentally. The dependence of the Schottky barrier height of the Ag-GaAsP structure on the composition of the solid solution is correlated with the dependence of the bandgap GaAsP on its composition. We calculate the equation describing the dependence of the height of the Ag-GaAsP Schottky barrier on the composition of GaAsP for indirect and direct-gap solid solutions.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
