Surface analysis and process optimization of black silicon

Abstract

This paper puts forward a description method for surface topography of black silicon using SF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> /C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> F <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sub> in a cyclic etching-passivation DRIE process. Three main parameters, i.e. density, height and width, are defined and used to describe black silicon and can be extended to several other parameters, such as aspect ratio, duty ratio and so on. By means of these parameters we can also establish a standard modal to provide the very basic data for other kind of research. So a program is developed to achieve these parameters expediently and accurately. Then we discuss the influence of the process parameters to surface topography and finally obtain a group of optimum parameters to fabricate black silicon. Through these results we are expecting to get better cognition of black silicon and form more controllable surface structures for mass production of black silicon.