Abstract
Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a photodetector, photovoltaic cell, photo-electrocatalysis, antibacterial surfaces, and sensors. With the development of fabrication technology, black silicon has expanded in more and more applications and has become a research hotspot. Herein, this review systematically summarizes the fabricating method of black silicon, including nanosecond or femtosecond laser irradiation, metal-assisted chemical etching (MACE), reactive ion etching (RIE), wet chemical etching, electrochemical method, and plasma immersion ion implantation (PIII) methods. In addition, this review focuses on the progress in multiple black silicon applications in the past 10 years. Finally, the prospect of black silicon fabricating and various applications are outlined.
Highlights
Black silicon material is a silicon material with a micro-scale, nano-scale, and both micro-nano scales, including various structures such as holes, needles, and columns structures on the surface of wafers [1,2,3,4,5]
Marthi et al [57] fabricated black silicon by MACE, and the researchers studied the effects of metal-assisted chemical etching at different times and substrate thickness on the optical properties of the material
The black silicon fabricated by this method has a reflectance of less than 5% in both visible and near-infrared wavelengths, but it has some disadvantages in terms of cost due to the expensive equipment required
Summary
Black silicon material is a silicon material with a micro-scale, nano-scale, and both micro-nano scales, including various structures such as holes, needles, and columns structures on the surface of wafers [1,2,3,4,5]. The atmosphere of the laser irradiation process is an extraordinarily important factor for the light absorption of black silicon, especially the absorption range. Viorobyev [10] et al fabricated black silicon by irradiating a high-intensity femtosecond laser directly on the silicon surface in an air atmosphere. Fabricated black silicon by irradiating a high-intensity femtosecond laser directly on the silicon surface in an air atmosphere. The material fabricated by laser irradiation can control the nanostructure on the surface to a certain extent by different time and laser power. The laser irradiation method can dope the element to limit impurity level, which can improve adsorption in the near-infrared band This method can fabricate high-performance black silicon to apply to wideband photodetectors. The femtosecond laser and nanosecond laser instruments are expensive and not suitable for manufacture and mass production
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