Abstract
Nano-structured V-shaped grooves on the black-silicon (B-Si) was fabricated to improve the optical emissivity for on-board spaceborne blackbody system. The deep reactive ion etching (DRIE) process was used to fabricate the V-shaped grooves on the B-Si wafer according to the etching conditions. The scanning electron microscopy (SEM) and infrared (IR) spectroscopy were used to evaluate the morphology, aspect ratio, and reflectance of the fabricated B-Si specimen. The surface of the B-Si was successfully structured with the nano-scale V-shaped grooves of which the height and diameter were approximately 670 nm and 200 nm, respectively. The reflectance of the B-Si was close to zero in a wavelength less than 1 μm. As a result, the fabricated B-Si with the nano-structured V-shaped grooves was suitable to the blackbody target for on-board spaceborne blackbody system.
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