Abstract
The resistivity of spatially selectable regions on p-type InAs is increased by epitaxial growth of a larger band-gap material, i.e., InAlAs, on top of InAs. Due to this InAlAs layer, the formation of a two-dimensional electron gas in the InAs layer is suppressed. This is demonstrated experimentally and supported by calculations of the conductance and valence band profile. At low temperature (4.2 K), the resistance of p-InAs coated with InAlAs and InGaAs is increased by a factor of 180 compared with bare p-InAs.
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