Abstract
The built-in voltage (Vbi) and the charged electronic state (ES) distribution in a solar cell determine its conduction and valence band profiles. Changes in the charge state of the ES give rise to J-V curve anomalies like cross-over, roll-over, and, in some cases, long J-V and capacitance transient effects. CdTe is highly compensated containing deep donor- and acceptor-like ES, with larger densities than the shallow acceptor density. For close compensation, the charge density in the depletion layer can be so low that Vbi is determined by the front and back contact work functions. In that case the cells must be analyzed in terms of an n/i/p junction model. AMPS models of two extreme profiles are discussed here as illustrations: an n/i/p junction, where Vbi is mainly supported by charge at the contacts, and an n/p junction, where Vbi is supported by charge in the bulk CdTe within the absorber.
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