Abstract
Based on three-dimensional (3D) technology computer aided design (TCAD) simulations, the supply voltage and temperature dependence of single-event transient (SET) pulse width in 28-nm fully-depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated. FDSOI MOSFETs are symmetry devices with a superior control of the short channel effects (SCEs) and single-event effects (SEEs). Previous studies have suggested that the SET width is invariant when the temperature changes in FDSOI devices. Simulation results show that the SET pulse width increases as the supply voltage decreases. When the supply voltage is below 0.6 V, the SET pulse width increases sharply with the decrease of the supply voltage. The SET pulse width is not sensitive to temperature when the supply voltage is 1 V. However, when the supply voltage is 0.6 V or less, the SET pulse width exhibits an anti-temperature effect, and the anti-temperature effect is significantly enhanced as the supply voltage drops. Besides, the mechanism is analyzed from the aspects of saturation current and charge collection.
Highlights
In recent years, the aerospace industry has developed rapidly, and more and more electronic systems are working in the radiation environment
When the heavy ions hit the sensitive region of the electronic device, their energy is deposited in the body region of the device
0.6 V or less the single-event transient (SET) pulse width exhibits an anti-temperature effect, and the anti-temperature effect is significantly enhanced as the supply voltage drops
Summary
The aerospace industry has developed rapidly, and more and more electronic systems are working in the radiation environment. A significant current is created and the drain voltage is changed 28-nm FDSOI devices can work at ultra-low supply voltage of 0.4 V to achieve ultra-low power challenges to the performance circuit, and that increases the sensitivity of thevoltage single-event consumption. Of it the is well known the drop in the supply bringseffect great significantly [13,14]. 28-nm challenges to the performance of the circuit, and increases the sensitivity of the single-event effect technology needs to beTherefore, studied. The temperature dependence of SET at low supply voltage is worthy to investigate
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