Radiation hardness evaluations of 65 nm fully depleted silicon on insulator and bulk processes by measuring single event transient pulse widths and single event upset rates

Abstract

We measure single event transient (SET) pulse widths on inverter chains and single event upset (SEU) rates on flip-flops (FFs) fabricated in 65 nm fully depleted silicon on insulator (FD-SOI) and bulk processes. The layout designs of test chips are strictly identical between their processes besides buried oxide (BOX) layers. Experimental results show that neutron-induced SEU and SET rates in the FD-SOI process are 230× and 450× lower than those in the bulk process, respectively.