Superior Memory of Er-Doped TiO2 Nanowire MOS Capacitor

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The capacitive memory of erbium (Er)-doped nanowire (NW) has been reported. The TiO2 and Er:TiO2 NWs’ active layer sandwiched between Au and Si has been used for this study. The capacitance ( ${C}$ )–voltage ( ${V}$ ) and conductance ( ${G}$ )–voltage ( ${V}$ ) characteristics have been studied for different high frequencies ranging from 1 to 10 MHz. Most importantly, ${C}$ – ${V}$ hysteresis for various sweeping voltages (±2, ±4, ±6, ±8, and ±10 V) was measured for both the devices. Er:TiO2 NW device depicted an extreme ${C}$ – ${V}$ hysteresis as well as memory window of ~3.52 V at ±10 V. Moreover, Er:TiO2 NW device also exhibited a low value of interface trap density ${D}_{\mathrm{it}} \sim 8.72\times 10^{{10}}$ eV−1cm−2 and good endurance and retention properties.