Abstract
Step-edge Josephson junctions in the c-axis oriented YBa2Cu3O7 films were fabricated on the CeO2-bufferedsapphire substrates. The step angles were controlled in the wide range of20-75° by an Ar ion milling technique. The I-V curves ofjunctions fabricated on the 35° step with the film thickness to thestep height ratio of about 0.8 exhibited a resistively shunted junction-likebehaviour with an ICRN product of about 250 µV and a criticalcurrent density of about 2×104 A cm-2 at 77 K. Thecritical currents of the step-edge junctions increased approximately linearlywith decreasing temperature but the normal resistance remained almostconstant. All the samples of the step-edge Josephson junctions satisfied ascaling behaviour of ICRN∝(JC)0.5, and a dc SQUID made out ofthose junctions exhibited a typical voltage modulation in an applied magneticfield.
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