Abstract
GaAs (100) crystals were implanted at room temperature with 120 keV S + ions to doses of 1×10 15 cm −2 and 3×10 15 cm −2. High resolution Rutherford backscattering and proton induced X-ray emission in combination with channeling and transmission electron microscopy were used to study the damage and lattice site location of S after annealing the samples at 800°C and 900°C for 15 min. It is found that the disorder reaches the amorphous level after implantation for both the above mentioned doses. Annealing at 800°C for 15 min results in a very good recovery of crystallinity with residual damage in the form of dislocation loops (∼ 3×10 5 cm −1) and small precipitates. The amount of precipitation has been evaluated and found to be ≲6% of the dopant concentration. Very high substitutionality (∼ 90%) was observed for both doses after 800° and 900°C anneal. Electrical measurements reveal that activation efficiency is very low (<2%). Based on these results a model of compensating defect complex formation is suggested.
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