Abstract
High-resolution Rutherford backscattering and proton-induced x-ray emission with channeling have been used to evaluate damage and lattice site location of Si-implanted GaAs. Semi-insulating Cr-doped GaAs (100) crystals were implanted at room temperature with 120-keV Si ions to a dose of 5×1015 cm−2. The residual damage and the locations in the lattice, which the implant occupies, are determined after annealing the samples at 950 °C for 15 min. It is shown that 70±7% of the implanted Si occupies substitutional lattice sites.
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