Abstract
The minority-carrier mobility μn and the Hall mobility μH of Cr-doped semi-insulating p-type GaAs crystals were investigated as a function of the wavelength λ of illumination in the region of 400–900 nm, at room temperature. The mobilities were determined by combining photomagnetoresistance and photo-Hall measurements. All the mobility (as a function of wavelenth) curves had the same characteristic form with a minimum at 700 nm. This form is explained by using the variation of the light penetration depth with the wavelength and the existence of two kinds of holes.
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