Abstract
Secondary ion mass spectrometry (s.i.m.s.) measurements on laser irradiated Cr-doped (semi-insulating) GaAs samples revealed a Cr redistribution effect near the surface region. The maximum depth at which redistribution is measured is shown to increase with increasing energy density from a Q-switched ruby laser, reaching a depth of ~1.4 µm for an energy density of 1.4 J/cm2. The redistribution is explained in terms of a zone refining process which occurs during the cooling cycle of the laser induced melted region.
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