Semiconductor drift chamber — An application of a novel charge transport scheme

Abstract

The purpose of this paper is to describe a novel charge transport scheme in semiconductors, in which the field responsible for the charge transport is independent of the depletion field. The application of the novel charge transport scheme leads to the following new semiconductor detectors: 1. 1) Semiconductor drift chamber; 2. 2) Ultralow capacitance - large area semiconductor X-ray spectrometers and photodiodes; 3. 3) Fully depleted thick CCD. Special attention is paid to the concept of the semiconductor drift chamber as a position sensing detecter for high energy charged particles. Position resolution limiting factors are considered and the values of the resolutions are given.