Abstract
The risetimes expected in a semiconductor drift chamber (SDC) incorporating a constant drift field component to the electric field have been calculated. The combined influence of systematic risetime broadening and the random broadening processes has been determined and applied to some hypothetical test cases. It is predicted that the resolution of a 50 mm diameter SDC at 300 K will be limited by straggle in the dead layer for alpha particle spectrometry. The same detector could also detect 10 keV X-rays with an anticipated σ of 1.4 keV, limited by the electronic noise.
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