Abstract
This paper explores the conditions for the electrodeposition of Moad (molybdenum adlayer) on Ag(111) from alkaline aqueous solution. Moreover, the first stages of the growth of MoSe2 are also presented, performing the deposition of Sead on the deposited Moad. The deposition of Moad on Sead/Ag(111) was also explored. MoSe2 is of interest due to its peculiar optoelectronic properties, making it suitable for solar energy conversion and nanoelectronics. In this study, electrodeposition techniques were exploited for the synthesis process as more sustainable alternatives to vacuum based techniques. The electrochemical atomic layer deposition (E-ALD) method emerges as a suitable technique to grow inorganic semiconductor thin films thanks to its fulfillment of the green energy predicament and a strict structural and morphological control, and this approach has gathered the attention of the scientific community. Indeed, E-ALD exploits surface limited reactions (SLRs) to alternate the deposition of chemically different atomic layers constituting a compound semiconductor. Thus, E-ALD is one of the most promising electrodeposition techniques for the growth of thin-film of compound semiconductors under a strict structural and morphological control. On this ground, E-ALD can be considered an ideal technique for the growth of 2D materials.
Highlights
One of the main topics in photovoltaic research concerns the study and development of low cost and energy inexpensive processes for the manufacturing of nano and microelectronic devices [1,2].This subject covers the production of semiconducting material and devices by processes involving the use of reduced amounts of rare elements, consuming less energy and producing less waste.Such technology aims to enable the production of thin films with optimal characteristics for their use in solar cells, limiting the environmental impact
The electrochemical atomic layer deposition (E-ALD) method enables the growth of monolayers of different elements, one above the other through, the alternate deposition of an atomic layer under the surface limited constraints ensured by the exploitation of the surface limited reactions (SLRs)
When the two elements are a chalcogenide and a metal, the process leads to the growth of a binary compound semiconductor
Summary
One of the main topics in photovoltaic research concerns the study and development of low cost and energy inexpensive processes for the manufacturing of nano and microelectronic devices [1,2].This subject covers the production of semiconducting material and devices by processes involving the use of reduced amounts of rare elements, consuming less energy and producing less waste.Such technology aims to enable the production of thin films with optimal characteristics for their use in solar cells, limiting the environmental impact. One of the main topics in photovoltaic research concerns the study and development of low cost and energy inexpensive processes for the manufacturing of nano and microelectronic devices [1,2] This subject covers the production of semiconducting material and devices by processes involving the use of reduced amounts of rare elements, consuming less energy and producing less waste. The E-ALD method enables the growth of monolayers of different elements, one above the other through, the alternate deposition of an atomic layer under the surface limited constraints ensured by the exploitation of the SLRs. When the two elements are a chalcogenide and a metal, the process leads to the growth of a binary compound semiconductor. Most of these papers reported that thin films obtained in this manner could be extremely flat from a morphological standpoint and the crystalline structures are often highly ordered (single crystal and epitaxial deposits)
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