Abstract
Subthreshold swing (SS) in a silicon gate-all-around (GAA) nanowire MOSFET with zero body factor is examined from room temperature (RT) down to 4 K. A fully depleted (FD) SOI MOSFET is also evaluated. The values of SS of both transistors decrease in proportional to temperature (T) but start to saturate below 18K, similar to transistors with non-zero body factor in the literature, indicating that the body factor is not related to the SS saturation phenomena at very low temperatures.
Highlights
THE quantum computer has attracted much attention for solving certain complex problems much faster than classical computers
We focused on the effect of body factor (γ) in
It is confirmed that the GAA nanowire transistor shows an almost ideal value of subthreshold swing (SS) as well as zero body factor at room temperature
Summary
THE quantum computer has attracted much attention for solving certain complex problems much faster than classical computers. It has been reported that the measured SS value is not in proportion to the temperature at very low temperatures and saturates around 10mV/dec [3,4,5,6,7,8,9]. The minimum and ideal SS is achieved in a transistor with γ = 0, where the coupling between the gate and the channel is strongly enough and the body coupling is negligible. In order to investigate the effect of γ on the SS saturation, we fabricated silicon gate-all-around (GAA) nanowire transistors with γ = 0 and SS = 60mV/dec at room temperature and carefully measured SS at various temperatures. [10], but all the data in this paper were re-measured and the device temperature was accurately calibrated by a pn diode temperature sensor. 300K down to 4K in (a) FDSOI and (b) GAA nanowire MOSFETs
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