Subthreshold Swing in Silicon Gate-All-Around Nanowire MOSFET at Cryogenic Temperature

Shohei Sekiguchi,Takuya Saraya,Min-Ju Ahn,Masaharu Kobayashi,Toshiro Hiramoto

doi:10.1109/edtm50988.2021.9420934

Subthreshold Swing in Silicon Gate-All-Around Nanowire MOSFET at Cryogenic Temperature

Shohei Sekiguchi, Takuya Saraya + Show 3 more

https://doi.org/10.1109/edtm50988.2021.9420934

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Publication Date: Apr 8, 2021

Citations: 4

Affiliation: The University of Tokyo

#Nanowire MOSFET #Subthreshold Swing + Show 3 more

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Abstract

Subthreshold swing (SS) in a silicon gate-all-around (GAA) nanowire MOSFET with zero body factor is examined from room temperature (RT) down to 6.5K. SS is 60.3mV/dec at RT and decreases in proportional to temperature (T), but SS tends to saturate below 36K, similar to transistors with non-zero body factor. The reasons for the phenomena are discussed.

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