Abstract
Workfunction modulated dual material gate FinFET (WMDMG-FinFET) is proposed to improve the DC performance of the device. A dual metal gate FinFET with linear modulation in workfunction along the source side of gate electrode keeping drain side gate electrode workfunction to be constant is introduced. Its subthreshold performance (i.e., switching ratio and subthreshold swing) is enhanced by introducing spacers in the side-walls of gate, with underlap concept. SILVACO TCAD tool is used to carry out the simulation work. The simulation results are compared for different spacers and it is observed that TiO2 spacer with high-k dielectric gives the best switching ratio and lowest subthreshold swing. The WMDMG-FinFET with spacers in the underlapped region shows better subthreshold characteristics as compared to conventional DMG-FinFET.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
