Abstract
The quality of UO2 single crystals grown by arc‐melting, by a modified floating‐zone technique (ICZG), and by vapor deposition was studied using etch‐pit patterns, electron microscopy, and X‐ray topography. These techniques complemented each other and indicated significant variations between the crystals grown by the different techniques. Both types of melt‐grown crystals contained extensive substructure and approximately 106 etch pits/cm2; finely dispersed inhomogeneities were found in the vapor‐grown crystals. Stoichiometry control during growth permitted a major improvement in the perfection of the ICZG crystals.
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