Abstract
The substrate current and degradation behaviour of a novel trench LDD MOSFET, to be used as a high voltage device in the periphery of flash memories, is studied. At high drain voltage an unusual increase of the substrate current for high gate voltages is observed. Supported by device simulation this effect is attributed to the high series resistance of the device. The location of peak ionization rate is found to be shifted from the channel below the gate towards the trench LDD region. The degradation of linear current under several V GS stress conditions shows its maximum at gate voltages near the threshold voltage of the device.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
