Substrate bias effect on the capture kinetics of random telegraph signals in submicron p-channel silicon metal–oxide–semiconductor transistors

Abstract

This letter investigates the effect of the substrate bias on the capture kinetics of random telegraph signals in submicron silicon p-channel metal–oxide–semiconductor transistors. A strong dependence of the capture time constant τc on the transverse electric field is observed. As a result, τc∼exp(−Ap) is observed experimentally, which is much stronger than the 1/p dependence predicted by simple Shockley–Read–Hall theory, whereby p is the surface density of free holes. The observations are explained tentatively by considering a field-dependent hole capture cross section. The latter may result from quantization effects induced by the transverse field in the two-dimensional inversion layer.