Effects of band bending on real space transfer in GaAs–AlxGa1−xAs layered heterostructures

Abstract

A program for solving Poisson’s equation in a single-particle Monte Carlo simulation has been used to obtain the transverse electric field distribution in GaAs–AlxGa1−xAs layered heterostructures with an externally applied electric field parallel to the layer interfaces. The effect of transverse electric field on real space transfer in these heterostructures are described. Transverse field amplitudes are equal to or greater than threshold fields for real space transfer, and their effect on real space transfer can be significant. In general, the presence of a transverse field in a real space transfer device reduces the peak velocity and the peak-to-valley ratio. Also, the threshold field can either be increased or decreased by the transverse field. Saturation velocities appear to be higher if a transverse field is present, although this conclusion is somewhat tentative.