Abstract
We have studied the lateral conductance of a GaAs/AlGaAs semiconductor structure with two tunnelling-coupled quantum wells, in a transverse electric field at 4.2 - 300 K. The transverse field was created by a Schottky barrier gate. A step-like dependence of the conductance on gate voltage was observed at temperatures below 160 K. Hall measurements demonstrated a more than 30-fold electron mobility drop in the region of maximum conductance slope (the derivative of the conductance with respect to gate voltage) at 77 K while the concentration remained practically constant. The results are explained by the change of the electron wavefunctions' configuration in the quantum wells with different carrier mobilities under applied transverse electric field. The structure is effectively controlled by a single front gate.
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