Abstract
Molecular beam epitaxy has been successfully employed to grow n-type ZnSe:Cl epilayers on (100) GaAs substrates at 275°C. The ZnSe:Cl epilayers are highly conducting and exhibit bright blue-violet edge luminescence at room temperature. A Hall mobility of 2480 cm 2/V⋯s at 40 K was measured for an n-type ZnSe:Cl film doped to a level of ∼3×10 17 cm -3 and for which a compensation ratio N A/ N D ∼ 4% was calculated. Carrier concentrations as large as 7×10 18 cm −3 were obtained by increasing the temperature of the MBE oven containing the Cl dopant. p-Type ZnSe films were prepared using Li as a substitutional dopant. The ZnSe:Li films exhibit photoluminescence spectra at 4 K dominated by an acceptor-bound exciton peak at 2.791 eV, providing clear evidence of p-type doping.
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