Abstract
ABSTRACTZnSe:Cl epilayers have been grown on (100) GaAs by MBE using a Zn to Se beam flux ratio of 2:1 and substrate temperatures as low as 225 °C. The ZnSe:Cl epilayers are highly conducting and exhibit bright blue-violet edge luminescence at 300 K. A mobility of 2480 cm2 /V-s at 40 K was measured for an n-type ZnSe:CI film that was Cl-doped to ∼2.3×1017 cm−3 and for which a compensation ratio (NA/ND) of ∼3% was calculated. Carrier concentrations as large as 6.7×1018cm−3 were obtained by increasing the temperature of the MBE oven containing the C1 dopant.
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