Substitutional carbon incorporation during Si1−x−yGexCy growth on Si(100) by molecular-beam epitaxy: Dependence on germanium and carbon

Abstract

We present results on the kinetics of substitutional carbon incorporation during growth of Si1−x−yGexCy alloys on silicon (100) using solid-source molecular-beam epitaxy. Substitutional carbon concentration decreases with increasing germanium content for samples grown at 400 °C with the same carbon flux and growth rate. The reduction in substitutional carbon concentration is small at low carbon flux, increasing significantly at higher carbon fluxes. The results indicate that the effect of either Ge or C concentration can dominate the substitutional C incorporation, depending on the total C concentration range.