Si1−x−yGexCy alloys: Growth and properties of a new semiconducting material

Abstract

The growth and properties of Si1−y Cy and Si1−x−y GexCy alloys pseudomorphically strained on Si(001) is reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers which more than 1 at. % C can be fabricated by molecular beam epitaxy and different chemical vapor deposition techniques. One of the most crucial questions is the relation between substitutional and interstitial carbon incorporation, which has a large impact on the electrical and optical properties of these layers. Substitutionally incorporated C atoms allow strain manipulation, including the growth of an inversely strained Si1−x−y GexCy layer. Local ordering effects due to atomic size differences and the growth on reconstructed surfaces, the mechanical and structural properties, and the influence of C atoms on band structure and charge carrier properties will be discussed. We show how lower carbon concentrations can influence dopant diffusion, without affecting strain and band alignment. Finally, we present possible applications of this new semiconducting material.KeywordsCarbon ConcentrationHall MobilityAlloy LayerMolecular Beam Epitaxy GrowthSiGe LayerThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.