Abstract
In this study controlled substitution of P by As atoms, by exposing an InP surface to cracked arsine, is demonstrated to form thin InAs layers. All structures have been grown by chemical beam epitaxy. The effect of the exposure time has been investigated in InAs single and multiple quantum wells. Characterisation was performed by X-ray diffraction and photoluminescence spectroscopy. A two-stage substitution process is concluded. During the fast first stage the top P layer is exchanged by As. Longer exposure times lead to the complete substitution of the P layer underneath. In the mean time a three-dimensional rearrangement results in the formation of InAs islands. These thin compressed InAs layers have successfully been used for strain compensation in Ga x In 1 − x As InP superlattice structures.
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