Abstract
Multiple quantum wells (MQW) and laser-containing InAs quantum dots were grown on GaAs using molecular-beam epitaxy. For the MQW, the wells consisted of monolayers of InAs covered by In 0.15Ga 0.85As, with the barrier layers being GaAs. The photoluminescence measurements were correlated with the strain in the wells. A continuing strain was observed for the wells containing thin InAs layer, where the photoluminescence wavelength was close to that of In 0.15Ga 0.85As. For the wells with a thicker InAs layer, with a photoluminescence wavelength of 1.28 μm, a discontinuing strain was observed. Doping of the well constituents with Si, individually or collectively, led to a reduced photoluminescence intensity, but an enhanced intensity was observed with the Be doping. Doping the InGaAs layer alone showed the least reduction in intensity using Si and most enhancement using Be. Continuous-wave lasing at room temperature was observed for the laser containing similar quantum wells.
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